| PART |
Description |
Maker |
| A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
| ORA5076 ORA5152 ORA5180 ORA5060 |
Dual Non-unity gain stable u-power CMOS Op Amp. Quad Non-unity gain stable, -40C to 85C, 8-SOIC 150mil, TUBE
Single Non-unity gain stable u-power CMOS Op Amp. Single w/Chip Select Non-unity, -40C to 85C, 8-PDIP, TUBE
Optoelectronic 光电
|
|
| EL2045 EL2045CS-T13 EL2045CS-T7 |
Op Amp, 100MHz, Gain-of-2 Stable, Low Power 5.2mA, SR=275V/s, Dual or Single Supply (36V)
Low-Power 100MHz Gain-of-2 Stable Operational Amplifier
|
Intersil Corporation
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| SSF2715 |
Extremely high dv/dt capability
|
Silikron Semiconductor Co
|
| STD5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| GFC034 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
